Phonon-induced decoherence and dissipation in donor-based charge qubits

We investigate the phonon-induced decoherence and dissipation in a donor-based charge quantum bit realized by the orbital states of an electron shared by two dopant ions which are implanted in a silicon host crystal. The dopant ions are taken from the group-V elements Bi, As, P, Sb. The excess electron is coupled to deformation potential acoustic phonons which dominate in the Si host. The particular geometry tailors a non-monotonous frequency distribution of the phonon modes. We determine the exact qubit dynamics under the influence of the phonons by employing the numerically exact quasi-adiabatic propagator path integral scheme thereby taking into account all bath-induced correlations. In particular, we have improved the scheme by completely eliminating the Trotter discretization error by a Hirsch-Fye extrapolation. By comparing the exact results to those of a Born-Markov approximation we find that the latter yields appropriate estimates for the decoherence and relaxation rates. However, noticeable quantitative corrections due to non-Markovian contributions appear.Comment: 8 pages, 8 figures, published online in Eur.Phys.J.B, article in press; the original publication is avaiable at www.eurphysj.or

Semiconductor Spintronics

Spintronics refers commonly to phenomena in which the spin of electrons in a solid state environment plays the determining role. In a more narrow sense spintronics is an emerging research field of electronics: spintronics devices are based on a spin control of electronics, or on an electrical and optical control of spin or magnetism. This review presents selected themes of semiconductor spintronics, introducing important concepts in spin transport, spin injection, Silsbee-Johnson spin-charge coupling, and spindependent tunneling, as well as spin relaxation and spin dynamics. The most fundamental spin-dependent nteraction in nonmagnetic semiconductors is spin-orbit coupling. Depending on the crystal symmetries of the material, as well as on the structural properties of semiconductor based heterostructures, the spin-orbit coupling takes on different functional forms, giving a nice playground of effective spin-orbit Hamiltonians. The effective Hamiltonians for the most relevant classes of materials and heterostructures are derived here from realistic electronic band structure descriptions. Most semiconductor device systems are still theoretical concepts, waiting for experimental demonstrations. A review of selected proposed, and a few demonstrated devices is presented, with detailed description of two important classes: magnetic resonant tunnel structures and bipolar magnetic diodes and transistors. In most cases the presentation is of tutorial style, introducing the essential theoretical formalism at an accessible level, with case-study-like illustrations of actual experimental results, as well as with brief reviews of relevant recent achievements in the field.Comment: tutorial review; 342 pages, 132 figure

Magnetic Field and Force Calculations for ATLAS Asymmetrical Structure

Magnetic field distortion in the assymetrical ATLAS structure are calculated. Magnetic forces in the system are estimated. 3D magnetic field simulation by the Opera3D code for symmetrical and asymmetrical systems is used

Mermaid 3D code in ATLAS applications

The paper describes the new periodic boundary condition model of ATLAS detector and changes in the Mermaid 3D code algorithms necessary to calculate it. The parallel processing modification of the Mermaid code to perform the complete Atlas model calculation is presented in comparison with this 1:10 model of the fine TileCal structure

ATLAS Cavern Magnetic Field Calculations

A new approach has been adopted in an attempt to produce a complete ATLAS cavern B-field map using a more precise methodological approach (variable magnetisation, depending on the external field) and the latest design taking into account of the structural elements. The basic idea was to produce a dedicated basic TOSCA model and then to insert a series of ferromagnetic structure elements to monitor the perturbative effect on the basic field map. Eventually, it was found: The bedplate field pertubation is an order of magnitude above the permissible level. Manufacturing of the bedplates from nonmagnetic material or careful evaluation of their field contribution in the event reconstruction codes is required. The field value at the rack positions is higher than the permissible one. The final position of racks should be chosen taking into account the detailed magnetic field distribution